cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 1/7 MTN2572E3 cystek product specification n-channel enhancement mode power mosfet MTN2572E3 bv dss 150v i d 44a r ds(on) 33m (typ.) features ? low gate charge ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? pb-free lead plating and rohs compliant package symbol outline to-220 MTN2572E3 d drain s source g gate g d s absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 150 gate-source voltage v gs 30 v continuous drain current @v gs =10v, t c =25 c i d 44 continuous drain current @v gs =10v, t c =100 c i d 31 pulsed drain current (note 1) i dm 120 avalanche current i as 18 a avalanche energy @ l=0.1mh, i d =20a, r g =25 e as 20 repetitive avalanche energy@ l=0.05mh (note 2) e ar 10 mj total power dissipation (t c =25 ) 156 p d w total power dissipation (t c =100) 78 operating junction and storage temperature tj, tstg -55~+175 c
cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 2/7 MTN2572E3 cystek product specification note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 0.96 thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 150 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.1 - v/ c reference to 25c, i d =1ma v gs(th) 1.5 2.8 4.0 v v ds = v gs , i d =250 a g fs - 34 - s v ds =5v, i d =20a i gss - - d 100 na v gs = d 30 - - 1 v ds =120v, v gs =0v i dss - - 25 a v ds =100v, v gs =0v, tj=125 c *r ds(on) - 33 50 m v gs =10v, i d =20a dynamic *qg - 30 - *qgs - 10 - *qgd - 8 - nc i d =20a, v ds =80v, v gs =10v *t d(on) - 13 - *tr - 12 - *t d(off) - 47 - *t f - 20 - ns v ds =75v, i d =1a, v gs =10v, r g =6 ciss - 2249 - coss - 225 - crss - 118 - pf v gs =0v, v ds =25v, f=1mhz rg - 2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 36 *i sm - - 120 a *v sd - - 1.3 v i f =i s , v gs =0v *trr - 120 - ns *qrr - 380 - nc i f =25a, v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTN2572E3-0-ub-s to-220 (pb-free lead plating and rohs compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton
cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 3/7 MTN2572E3 cystek product specification typical characteristics typical output characteristics 0 40 80 120 160 0246810 v ds , drain-source voltage(v) i d , drain current(a) 5v,6v,7v,8v,9v,10v v gs =3v v gs =4v v gs =2 v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v 5v 6v 7v 8v 9v 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 04812162 0 0 tj=25c tj=150c drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =20a r ds( on) @tj=25c : 33 m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =20a
cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 4/7 MTN2572E3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalizedthreshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =80v i d =20a maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 1s r ds( on) limit t c =25c, tj=150, v gs =10v r jc =0.96c/w, single pulse typical transfer characteristics 0 20 40 60 80 100 120 140 160 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v
cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 5/7 MTN2572E3 cystek product specification typical characteristics(cont.) maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =0.96c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) z jc (t), thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.z jc (t)=0.96c/w max. 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t)
cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 6/7 MTN2572E3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c434e3 issued date : 2012.12.04 revised date : page no. : 7/7 MTN2572E3 cystek product specification to-220 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. a b e g i k m o p 3 2 1 c n h d 4 style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-220 plastic package cystek package code: e3 marking: cys 2572 1 2 3 device name date code dim min. max. min. max. a 0.2441 0.2598 6.20 6.60 i - * 0.1508 - * 3.83 b 0.3386 0.3543 8.60 9.00 k 0.0299 0.0394 0.76 1.00 c 0.1732 0.1890 4.40 4.80 m 0.0461 0.0579 1.17 1.47 d 0.0492 0.0571 1.25 1.45 n - * 0.1000 - * 2.54 e 0.0142 0.0197 0.36 0.50 o 0.5217 0.5610 13.25 14.25 g 0.3858 0.4094 9.80 10.40 p 0.5787 0.6024 14.70 15.30 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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